Job Description

As a PhD candidate in R&D CMOS Integration, you will conduct advanced research on the development and optimization of ferroelectric HfO₂-based devices for next‑generation memory and AI applications.

Core Research Topics

Ferroelectric HfO₂ Devices (FeFET / FeCAP)

• Optimization of HfO₂ thin films for stable ferroelectric behavior and investigation of polarization switching, retention, endurance, and variability.

• Device-level physics analysis of ferroeletricity based CMOS embedded devices and in-memory computing applications.

• Exploration of integration schemes into advanced FDSOI (FDX®) and bulk CMOS technologies.

Advanced Characterization & Materials Analysis

• Structural and electrical analysis using: TEM / STEM (including advanced contrast techniques such as DPC) / SEM and nanoscale imaging tools

• Electrical device and simple circuit characterization and mapping the results to structural data.

Required Qualifications

• Master’s / Diplom degree in Materials Science, Physics, Electrical Engineering, or a related discipline

• Strong expertise in semiconductor materials analysis and nanostructure characterization.

• Hands-on experience with TEM / STEM /SEM characterization FIB preperation and analysis are beneficial.

• Experience in data analysis using Python

• Background in semiconductor device physics (e.g., MOSFETs, ferroelectric devices)

• Exposure to HfO₂-based ferroelectric devices / FeFETs are desirable

• Proven research capability through Thesis work at leading research institutes and Scientific publications or conference contributions

What We Offer

• Direct supervision within the Technology Architect /TD Group at GlobalFoundries Dresden

• Access to state-of-the-art semiconductor fabrication and characterization infrastructure

• Opportunity to work at the forefront of Ferroelectric memory technologies and AI hardware and in-memory computing

• Strong collaboration with internal R&D, device engineering, and external research partners

• Opportunity to publish in leading journals and present at top-tier conferences

• Integration into one of Europe’s leading semiconductor research ecosystems

Key Details

• Start Date: October 1st, 2026; limited contract for 3 years.

• Location: GlobalFoundries Dresden, F1.

• Degree: PhD (in cooperation with a partner university, e.g. TU Dresden)